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Mechanisms for Microstructure Evolution in Electroplated Copper Thin Films

Published online by Cambridge University Press:  10 February 2011

J. M. E. Harper,
C. Cabral Jr.,
P. C. Andricacos,
L. Gignac,
I. C. Noyan,
K. P. Rodbell and
C. K. Hu
J. M. E. Harper
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
C. Cabral Jr.
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
P. C. Andricacos
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
L. Gignac
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
I. C. Noyan
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
K. P. Rodbell
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
C. K. Hu
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

We present a model which accounts for the dramatic evolution in the microstructure of electroplated copper thin films near room temperature. Microstructure evolution occurs during a transient period of hours following deposition, and includes an increase in grain size, changes in preferred crystallographic texture, and decreases in resistivity, hardness and compressive stress. As the grain size increases from the as-deposited value of 0.05–0.1 μm up to several μm, the decreasing grain boundary contribution to electron scattering lowers the resistivity by tens of percent to near-bulk values. Concurrently, as the volume of grain boundaries decreases, the stress is shown to change in the tensile direction by tens of MPa. The as-deposited grain size is also shown to be consistent with grain boundary pinning.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999, 387
Copyright
Copyright © Materials Research Society 1999

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