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Metal / Silicon Multilayers Produced by Low-Temperature MOCVD

Published online by Cambridge University Press:  10 February 2011

F. Hamelmann,
G. Haindl,
A. Klipp,
E. Majkova,
U. Kleineberg,
P. Jutzi and
U. Heinzmann
F. Hamelmann
Affiliation:
Department of Physics, University Bielefeld, 33615 Bielefeld, Germany, hamelmann@physik.uni-bielefeld.de
G. Haindl
Affiliation:
Department of Physics, University Bielefeld, 33615 Bielefeld, Germany, hamelmann@physik.uni-bielefeld.de
A. Klipp
Affiliation:
Department of Chemistry, University Bielefeld, 33615 Bielefeld, Germany
E. Majkova
Affiliation:
Department of Physics, University Bielefeld, 33615 Bielefeld, Germany, hamelmann@physik.uni-bielefeld.dePermanent address: Institute of Physics SAS, 84228 Bratislava, Slovakia
U. Kleineberg
Affiliation:
Department of Physics, University Bielefeld, 33615 Bielefeld, Germany, hamelmann@physik.uni-bielefeld.de
P. Jutzi
Affiliation:
Department of Chemistry, University Bielefeld, 33615 Bielefeld, Germany
U. Heinzmann
Affiliation:
Department of Physics, University Bielefeld, 33615 Bielefeld, Germany, hamelmann@physik.uni-bielefeld.de
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Abstract

W/Si and Mo/Si multilayers with 20 periods (doublelayer spacing d = 24nm) were deposited on silicon substrates using (remote-) plasma-enhanced MOCVD. The substrate temperature was below 200°C, which is necessary to avoid interdiffusion of the layers. The layer thickness and growth was controlled by an in situ soft x-ray reflectivity measurement. The characterisation of the multilayers showed an excellent growth of the silicon layers, while the metal layers are rough with embedded crystallites.

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