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Microstructural Characterization of Porous Silicon SOI Structures

Published online by Cambridge University Press:  28 February 2011

J.D. L'ecuyer,
M.H. Loretto,
J.P.G. Farr,
J.M. Keen,
J.G. Castledine and
G. L'esperance
J.D. L'ecuyer
Affiliation:
Department of Metallurgy and Materials, University of Birmingham, P.O. Box 363, Birmingham, B15 2TT, U.K.
M.H. Loretto
Affiliation:
Department of Metallurgy and Materials, University of Birmingham, P.O. Box 363, Birmingham, B15 2TT, U.K.
J.P.G. Farr
Affiliation:
Department of Metallurgy and Materials, University of Birmingham, P.O. Box 363, Birmingham, B15 2TT, U.K.
J.M. Keen
Affiliation:
Roya1 Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, WR14 3PS, U.K.
J.G. Castledine
Affiliation:
Roya1 Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, WR14 3PS, U.K.
G. L'esperance
Affiliation:
Departement de Genie Metallurgique, Ecole Polytechnique, C.P. 6079, Succ. “A”, Montreal, H3C 3A7, Canada
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Abstract

SOI structures up to 60nm wide have been produced using oxidized porous silicon formed by selective n/n+ anodizing. The microstructures of the islands were investigated using TEM in both the planar and cross-section geometries. Typical island thickness is about 0.15nm and the buried oxidized porous silicon about 0.65μm. Retention of the island geometry is excellent. Few defects (essentially dislocations) are associated with either the anodizing or oxidation treatments. The interface sharpness between the epitaxial silicon/oxidized porous silicon is 10-20nm, an order of magnitude sharper than the back interface between the oxidized porous silicon and the substrate.

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