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Microstructural Development of Dispersion Strengthened Cu Thin Films

Published online by Cambridge University Press:  10 February 2011

D. Weiss,
O. Kraft and
E. Arzt
D. Weiss
Affiliation:
Max-Planck-Institut für Metallforschung, Seestr. 92, D-70174 Stuttgart, Germany
O. Kraft
Affiliation:
Max-Planck-Institut für Metallforschung, Seestr. 92, D-70174 Stuttgart, Germany
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung, Seestr. 92, D-70174 Stuttgart, Germany
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Abstract

The internal oxidation method is applied for the first time to produce a fine dispersion of second phase particles in thin films. A processing route is presented which includes ultra-high vacuum magnetron sputtering of about 1 μm thick alloy films onto Si substrates followed by in situ annealing and oxidation. Two different Cu-base alloys are examined, Cu-Y and Cu-Al, in which the extent of miscibilitiy differs significantly. This has considerable influence on the grain growth behavior. Nanoindention and wafer-curvature experiments show a drastic improvement of both room-temperature and high-temperature strength. Phenomena well known from bulk oxide-dispersion strengthened (ODS) alloys are found to appear in the thin films as well: Results on abnormal grain growth and the formation of creep voids are presented and discussed in terms of particle effects.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 562: Symposium L – Polycrystalline Metal & Magnetic Thin Films , 1999, 257
Copyright
Copyright © Materials Research Society 1999

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References

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