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Microstructural evolution of La-doped SiB6 high-temperature thermoelectric material during a Spark Plasma Sintering

Published online by Cambridge University Press:  21 March 2011

D.W. Lee,
J.H. Won,
K.H. Kim,
J. Matsushita and
K.B. Shim
D.W. Lee
Affiliation:
CPRC, Hanyang Univ., Seoul 133-791, Korea
J.H. Won
Affiliation:
CPRC, Hanyang Univ., Seoul 133-791, Korea
K.H. Kim
Affiliation:
Dept. of Mat. Sci., Tokai Univ., Hirasuka 259-1292, Japan TEL:+82-2-2290-0501, FAX:+82-2-2291-7395, e-mail: kbshim@hanyang.ac.kr
J. Matsushita
Affiliation:
Dept. of Mat. Sci., Tokai Univ., Hirasuka 259-1292, Japan TEL:+82-2-2290-0501, FAX:+82-2-2291-7395
K.B. Shim
Affiliation:
CPRC, Hanyang Univ., Seoul 133-791, Korea
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Abstract

SiB6 has proved to a potentially useful material because of its excellent thermoelectrical properties above 700°C, low specific gravity, high degree of hardness, and moderate melting point. SiB6, which has poor sinterability with a conventional sintering technique due to the covalent characteristic, has been successfully densified fully using a spark plasma sintering(SPS) method. The SPS-processed specimens consisted of SiB6, SiB4 and SixBy phases. Pure SiB6 powder were densified fully at the sintering temperature of 1600°C. In particular, it was found that the rare earth element was very effective in evolving the microstructure of SiB6 phase, resulting in reducing the sintering temperature and controlling grain growth. These effects were discussed in details in terms of microstructure evolution during the SPS process.

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References

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