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Microstructure of Irradiated Silicon

Published online by Cambridge University Press:  16 February 2011

J. S. Williams,
J. Wong-Leung,
R. D. Goldberg and
M. Petravic
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra 0200, Australia
J. Wong-Leung
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra 0200, Australia
R. D. Goldberg
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra 0200, Australia
M. Petravic
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra 0200, Australia
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Abstract

This paper provides a brief overview of some issues relating to the microstructure of irradiated silicon which are of importance to the semiconductor industry. The nature of ion-induced disorder and conditions for amorphization are initially treated since the starting microstructure can strongly influence subsequent annealing behaviour, particularly removal of residual defects, dopant diffusion and electrical activation. The use of implantation-induced disorder as a means of removing metallic impurities, so called gettering, is also an issue of major current interest for improved performance of devices. Some new gettering results are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994, 543
Copyright
Copyright © Materials Research Society 1995

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References

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