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Microstructures of Si Surface Layers Implanted with Cu

Published online by Cambridge University Press:  22 February 2011

David M. Follstaedt and
Samuel M. Myers
David M. Follstaedt
Affiliation:
Semiconductor Physics Dept., Sandia National Laboratories, Albuquerque, NM 87185-1056
Samuel M. Myers
Affiliation:
Semiconductor Physics Dept., Sandia National Laboratories, Albuquerque, NM 87185-1056
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Abstract

The microstructures of Si ion-implanted with Cu have been characterized by TEM after annealing. For 1.2 at.%, the Cu is trapped at planar defects, but for 10 at.%, η-Cu3Si forms, allowing Cu to diffuse at its equilibrium solubility. These observations allow proper evaluation of the binding energies of Cu to previously formed internal cavities (2.2 eV) and η-Cu3Si (1.7 eV). The η-Cu3Si in the 10 at.% layer catalyzes oxidation of the Si. The microstructures also indicate that Si implanted with ~2 at.% Cu reforms epitaxially with embedded defects after 8 hr. at 700°C, but for ~10 at.% Cu, epitaxy is not recovered after 6 hours at 600ºC.

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References

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