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A Model to Explain the Variations of “End-of-Range” Defect Densities with Ion Implantation Parameters

Published online by Cambridge University Press:  25 February 2011

L. Laanab,
C. Bergaud,
M. M. Faye,
J. Faure,
A. Martinez and
A. Claverie
L. Laanab
Affiliation:
CEMES/CNRS, BP 4347, 31055, Toulouse, France
C. Bergaud
Affiliation:
LAAS/CNRS, 7 av. du Colonel Roche, 31077 Toulouse, France
M. M. Faye
Affiliation:
CEMES/CNRS, BP 4347, 31055, Toulouse, France
J. Faure
Affiliation:
INSERM U314,21 rue C. Ader, 51100 Reims, France
A. Martinez
Affiliation:
LAAS/CNRS, 7 av. du Colonel Roche, 31077 Toulouse, France
A. Claverie
Affiliation:
CEMES/CNRS, BP 4347, 31055, Toulouse, France
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Abstract

Computer simulations in conjunction with TEM experiments have been used to test the different models usually adopted in the literature to explain the formation of “End Of Range”(EOR) defects which appear after annealing of preamorphized silicon layers. Only one survives careful experimental investigations involving Si+, Ge+, Sn+ amorphization at RT and LNT. The “excess-interstitial” model appears relevant at least for a semi-quantitative explanation of the source of point-defects which after recombination and agglomeration, lead to the formation of these defects. This model may be used for the numerical optimization of conditions for the production of high performances ullra-shallow junctions.

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