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Modeling of a GaN Based Static Induction Transistor

Published online by Cambridge University Press:  15 February 2011

Gabriela E. Bunea,
S.T. Dunham and
T.D. Moustakas
Gabriela E. Bunea
Affiliation:
Dept. of Physics, Boston University, Boston, MA, 02215, gbunea@bu.edu
S.T. Dunham
Affiliation:
Dept. of Electrical and Computer Engineering, Boston University, Boston, MA, 02215
T.D. Moustakas
Affiliation:
Dept. of Electrical and Computer Engineering, Boston University, Boston, MA, 02215
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Abstract

Static induction transistors (SITs) are short channel FET structures which are suitable for high power, high frequency and high temperature applications. GaN has particularly favorable properties for SIT operation. However, such a device has not yet been fabricated. In this paper we report simulation studies on GaN static induction transistors over a range of device structures and operating conditions. The transistor was modeled with coupled drift-diffusion and heat-flow equations. We found that the performance of the device depends sensitively on the thermal boundary conditions, as self-heating effects limit the maximum voltage swing.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998, G6.41
Copyright
Copyright © Materials Research Society 1999

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