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Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants

Published online by Cambridge University Press:  15 February 2011

Alp H. Gencer and
Scott T. Dunham
Alp H. Gencer
Affiliation:
Department of Electrical and Computer Engineering Boston University, Boston, MA 02215
Scott T. Dunham
Affiliation:
Department of Electrical and Computer Engineering Boston University, Boston, MA 02215
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Abstract

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). We have developed a comprehensive model which, in combination with a model and parameters for {311} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996, 35
Copyright
Copyright © Materials Research Society 1997

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