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Modeling of Dopant Diffusion during Annealing of Sub-Amorphizing Implants

Published online by Cambridge University Press:  22 February 2011

Scott Dunham
Scott Dunham*
Affiliation:
Electrical, Computer and Systems Engineering Department, Boston University, Boston, MA 02215
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Extract

Ion implant annealing is a complicated process involving the interactions of point defects generated during the implantation, implanted or previously present dopants, and extended defects which form as a result of the implant damage. To effectively model the process, it is essential to determine the critical processes, assess the validity of assumptions and calculate appropriate parameter values. In addition, implant annealing is just one element in the VLSI fabrication process, and the model development must consider the process as part of the broad range of experimental observations, as it is only through consistent physical models that simulators can predict the multiple interactions and two and three-dimensional effects present in VLSI structures. This work focuses on enhanced diffusion following silicon implants below the amorphization threshold as a function of dose, energy and time.

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References

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