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Modeling of TED Point Defect Paramater Extraction

Published online by Cambridge University Press:  01 February 2011

Heidi Meyer and
Scott T. Dunham
Heidi Meyer
Affiliation:
Depatment of Materials Science and Engineering, University of Wasghington, Seattle, WA 98195, USA
Scott T. Dunham
Affiliation:
Depatment of Materials Science and Engineering, University of Wasghington, Seattle, WA 98195, USADepatment of Electrical Enginerring, University of Washington, Seattle, WA 98195, USA
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Abstract

The work investigates simple transient enhanced diffusion (TED) behavior, which is a reflection of the interstitial behavior in the system. The analysis shows that TED depends mainly on two factors: the intial demage profiles and the DICI product. We find that, based on these two inputs, the extent of TED can be accurately diffusion capacity (DICI) which is compared to values previously extracted from diffcusion and silicon self-diffusion experiments.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002, C4.8
Copyright
Copyright © Materials Research Society 2002

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