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Modulation Spectroscopy Characterization of Semiconductor Heterostructures

Published online by Cambridge University Press:  21 February 2011

H. Qiang,
D. Yan,
Yichun Yin and
Fred H. Pollak
H. Qiang
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210 USA
D. Yan
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210 USA
Yichun Yin
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210 USA
Fred H. Pollak
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210 USA
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Abstract

This paper reviews the use of modulation spectroscopy for the characterization of a wide variety of semiconductor heterostructures and devices. Some systems that will be discussed include pseudomorphic GaAlAs/InGaAs/GaAs modulation-doped quantum well high electron mobility transistors (including the 300K determination of the two-dimensional electron gas density), GaAlAs/GaAs, InP/InGaAs, InGaP/GaAsInAlAs/InGaAs and InGaAs/GaAs heterojunction bipolar transistors (including the determination of the built-in fields/doping levels in the emitter and collector regions), GaAs/GaAlAs quantum well infrared detectors, quantum well lasers and GaAs/GaAlAs quantum dots. Particular attention will be paid to non-destructive, contactless techniques such as photoreflectance, contactless electroreflectance and differential reflectometry that can be performed on entire wafers.

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