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Mott Transition Field Effect Transistor: Experimental Results

Published online by Cambridge University Press:  10 February 2011

A. G. Schrott,
J. A. Misewich,
B. A. Scott,
A. Gupta,
D. M. Newns and
D. Abraham
A. G. Schrott
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598.
J. A. Misewich
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598.
B. A. Scott
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598.
A. Gupta
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598.
D. M. Newns
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598.
D. Abraham
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598.
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Abstract

In this paper we describe the fabrication of oxide based devices similar in architecture to a conventional FET with source, drain, and gate electrodes and a channel. This distinctive characteristic of our device is the use of a channel material capable of undergoing a field-induced Mott insulator-metal transition at room temperature. Lithographic techniques developed for oxide materials have been combined with pulsed laser deposition of perovskite materials onto single-crystal strontium titanate (STO) substrates to fabricate these devices. Materials chosen for the Mott transition channel include La2CuO4 (LCO) and YBCO, p-type; and Nd2CuO4, n-type.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999, 243
Copyright
Copyright © Materials Research Society 1999

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References

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