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Multi-Layered SiC Nanocrystals Embedded in SiO2 Dielectrics for Nonvolatile Memory Application

Published online by Cambridge University Press:  31 January 2011

Dong Uk Lee,
Tae Hee Lee,
Eun Kyu Kim,
Jin-Wook Shin and
Won-Ju Cho
Dong Uk Lee
Affiliation:
kom7807@gmail.com, Hanyang Universiyu, Physics, Seoul, Korea, Republic of
Tae Hee Lee
Affiliation:
taeddy0518@naver.com, Hanyang Universiyu, Physics, Seoul, Korea, Republic of
Eun Kyu Kim
Affiliation:
ek-kim@hanyang.ac.kr, Hanyang Universiyu, Physics, Seoul, Korea, Republic of
Jin-Wook Shin
Affiliation:
sinjinwook@nate.com, Kwangwoon University, Electronic Materials Engineering, 139-701, Korea, Republic of
Won-Ju Cho
Affiliation:
chowj@kw.ac.kr, Kwangwoon University, Electronic Materials Engineering, 139-701, Korea, Republic of
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Abstract

A nonvolatile memory device with the multi-layered SiC nanocrystals embedded in the SiO2 dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The SiC nanocrystals were formed by using post thermal annealing process. The transmission electron microscope analysis showed the multi-layered SiC nanocrystals between the tunnel and the control oxide layers. The average size and density of the SiC nanocrystals were approximately 5 nm and 2×1012 cm-2, respectively. The memory window of nonvolatile memory devices with the multi-layered of SiC nanocrystals was about 2.7 V during the operations at ±10 V for 700 ms, and then it was maintained around at 1.1 V after 105 sec.

Keywords

memoryelectronic materialdevices

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009, 1160-H04-01
Copyright
Copyright © Materials Research Society 2009

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