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Nanostructured silicon films produced by PECVD

Published online by Cambridge University Press:  17 March 2011

R. Martins,
H. Águas,
V. Silva,
I. Ferreira,
A. Cabrita and
E. Fortunato
R. Martins
Affiliation:
CENIMAT, DCM- FCT/UNL and CEMOP/UNINOVA, Quinta da Torre, 2825-114 Monte de Caparica, Portugal
H. Águas
Affiliation:
CENIMAT, DCM- FCT/UNL and CEMOP/UNINOVA, Quinta da Torre, 2825-114 Monte de Caparica, Portugal
V. Silva
Affiliation:
CENIMAT, DCM- FCT/UNL and CEMOP/UNINOVA, Quinta da Torre, 2825-114 Monte de Caparica, Portugal
I. Ferreira
Affiliation:
CENIMAT, DCM- FCT/UNL and CEMOP/UNINOVA, Quinta da Torre, 2825-114 Monte de Caparica, Portugal
A. Cabrita
Affiliation:
CENIMAT, DCM- FCT/UNL and CEMOP/UNINOVA, Quinta da Torre, 2825-114 Monte de Caparica, Portugal
E. Fortunato
Affiliation:
CENIMAT, DCM- FCT/UNL and CEMOP/UNINOVA, Quinta da Torre, 2825-114 Monte de Caparica, Portugal
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Abstract

This paper presents the process conditions that lead to the production of nanostructured silicon films grown by plasma enhanced chemical vapour deposition close to the so-called gamma regime (powder formation), highly dense and with low density of bulk states. Thus, the powder management is one important issue to be addressed in this paper. As a general rule we observed that high quality films (low density of states and high μτ products) are obtained when films are grown under low ion bombardment at high hydrogen dilution and deposition pressure conditions, to allow the proper surface passivation and surface activation.

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References

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