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Nanostructured Zinc Oxide Piezoelectric Energy Generators Based on Semiconductor P-N Junctions

Published online by Cambridge University Press:  11 July 2012

Joe Briscoe,
Mark Stewart,
Melvin Vopson,
Markys Cain,
Paul M. Weaver and
Steve Dunn
Joe Briscoe
Affiliation:
Centre for Materials Research, School of Engineering and Materials Science, Queen Mary University of London, E1 4NS, UK.
Mark Stewart
Affiliation:
National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK.
Melvin Vopson
Affiliation:
National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK.
Markys Cain
Affiliation:
National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK.
Paul M. Weaver
Affiliation:
National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK.
Steve Dunn*
Affiliation:
Centre for Materials Research, School of Engineering and Materials Science, Queen Mary University of London, E1 4NS, UK.
*
*Email: j.briscoe@qmul.ac.uk
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Abstract

ZnO nanorods grown on plastic substrates by chemical methods are combined with both inorganic and organic p-type materials to make flexible p-n junction devices. When bent the devices generate both voltage and current peaks, which is attributed to the piezoelectric effect in the ZnO nanorods. The best device produces a maximum possible power density of 100 nWcm‑2. When vibrated at a constant frequency the voltage output by the devices scales linearly with vibration amplitude. Also, when illuminated the output of the devices drops. These effects are consistent with a piezoelectric source of the voltage.

Keywords

piezoelectricenergy generationnanostructure

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References

REFERENCES

Anton, S. R.; Sodano, H. A. Smart Mater. Struct. 16, R1–R21 (2007).CrossRefGoogle Scholar
Cook-Chennault, K. A.; Thambi, N.; Sastry, A. M. Smart Mater. Struct. 17, 04300 (2008).CrossRefGoogle Scholar
Wang, Z. L.; Song, J. Science 12, 242–246 (2006).CrossRefGoogle Scholar
Qin, Y.; Wang, X.; Wang, Z. L. Nature 451, 809–813 (2008).CrossRefGoogle Scholar
Zhang, J.; Li, M.; Yu, L.; Liu, L.; Zhang, H.; Yang, Z. Appl. Phys. A 97, 869–876 (2009).CrossRefGoogle Scholar
Xu, S.; Qin, Y.; Xu, C.; Wei, Y.; Yang, R.; Wang, Z. L. Nat. Nano. 5, 366–373 (2010).CrossRefGoogle Scholar
Choi, M.-Y.; Choi, D.; Jin, M.-J.; Kim, I.; Kim, S.-H.; Choi, J.-Y.; Lee, S. Y.; Kim, J. M.; Kim, S.-W. Adv. Mater. 21, 2185–2189 (2009).CrossRefGoogle Scholar
Leschkies, K. S.; Divakar, R.; Basu, J.; Enache-Pommer, E.; Boercker, J. E.; Carter, C. B.; Kortshagen, U. R.; Norris, D. J.; Aydil, E. S. Nano Lett. 7, 1793–1798 (2007).CrossRefGoogle Scholar
Briscoe, J.; Gallardo, D. E.; Dunn, S. Chem. Comm. 2009, 1273–1275 (2009).CrossRefGoogle Scholar
Briscoe, J.; Gallardo, D. E.; Hatch, S.; Lesnyak, V.; Gaponik, N.; Dunn, S. J. Mater. Chem. 21, 2517–252 (2011).CrossRefGoogle Scholar
Jaffe, H.; Berlincourt, D. Proc. IEEE 53, 1372 (1965).CrossRefGoogle Scholar
Hutson, A. R. Phys. Rev. Lett. 4, 505 (1960).CrossRefGoogle Scholar
Batra, I. P.; Wurfel, P.; Silverman, B. D. Phys. Rev. B 8, 3257 (1973).CrossRefGoogle Scholar
Briscoe, J.; Stewart, M.; Vopson, M.; Cain, M.; Weaver, P. M.; Dunn, S. Adv. Energy Mater., 2012, DOI:10.1002/aenm.201200205.Google Scholar
Giocondi, J. L.; Rohrer, G. S. J. Phys. Chem. B 105, 8275 (2001).CrossRefGoogle Scholar