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Near Defect Free GaN Substrates

Published online by Cambridge University Press:  10 February 2011

S. Porowski
S. Porowski*
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, sylvek@unipress.waw.pl
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Abstract

The current status of GaN crystallization under high nitrogen pressure will be presented. Both conductive and semi-insulating GaN crystals will be characterized.

In particular the influence of Mg on the growth mechanisms will be discussed. The influence of Mg doping on morphology of Mg-doped crystals grown under pressure and Mg-doped homoepitaxial layers will be shown. It will be also shown that the addition of about I at.% of Mg into the solution improves significantly the structural quality of crystals reducing dislocation density at least by 3 orders of magnitude comparing to the crystals grown without an intentional doping. As it was estimated by selective wet etching and transmission electron microscopy the dislocation densities in the Mg-doped GaN is as low as 10 cm-1. The introduction of Mg also lowers the optical absorption coefficients for energies below fundamental edge by 2 to 3 orders of magnitude what is explained by disappearance of defect related states in the gap.

The procedures for preparation of atomically flat epi-ready (000 1 ) surfaces without subsurface damage will be described. It will be shown that high quality homoepitaxial layers growing by monoatomic steps are possible on these substrates.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998, G1.3
Copyright
Copyright © Materials Research Society 1999

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