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Near Interface Oxide Degradation in High Temperature Annealed Si/SiO2/Si Structures

Published online by Cambridge University Press:  21 February 2011

R. A. B. Devine,
D. Mathiot,
W. L. Warren and
D. M. Fleetwoodi
R. A. B. Devine
Affiliation:
CNS-CNET France Télécom, BP 98,38243 Meylan, France
D. Mathiot
Affiliation:
CNS-CNET France Télécom, BP 98,38243 Meylan, France
W. L. Warren
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185-5800
D. M. Fleetwoodi
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185-5800
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Abstract

Degradation of 430 nra thick SiO2 layers in Si/SiO2/Si structures which results from high temperature annealing (1320°C) has been studied using electron spin resonance, infra-red absorption spectroscopy and refractive index measurements. Large numbers of oxygen-vacancies are found in a region ≤ 100 nm from each Si/SiO2 interface. Two types of paramagnetic defects are observed following γ or X-irradiation or hole injection. The 1106 cm−l infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.

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References

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