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New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectroscopy (Ir-Ras)

Published online by Cambridge University Press:  21 February 2011

K. Ishikawa,
H. Ogawa,
C. Inomata,
S. Fujimura and
H. Mori
K. Ishikawa
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
H. Ogawa
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
C. Inomata
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
S. Fujimura
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
H. Mori
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Abstract

Simulation of a thin oxide RAS spectrum obtained by using the dielectric function extracted from thick oxide RAS spectra is shown to be a viable method for the comparison of oxide films of differing thickness. Bulk and near-interfacial features of thermally grown SiO2 thin films were studied by this method and it was found that the LO phonon peak at about 1255 cm−1 reflects bulk SiO2 structure and a higher reflectance between 1100 and 1200 cm−1 reflects SiO2/Si interface structure.

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References

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