Hostname: page-component-7b7567c8c-kwt9d Total loading time: 0 Render date: 2026-11-14T08:13:47.835Z Has data issue: false hasContentIssue false

New Magnesium Precursors for Doping Semiconductor Films

Published online by Cambridge University Press:  10 February 2011

Charles H. Winter
Affiliation:
Department of Chemistry, Wayne State University, Detroit, Michigan 48202, cwinter@sun.science.wayne.edu
Jennifer L. Sebestl
Affiliation:
Department of Chemistry, Wayne State University, Detroit, Michigan 48202, cwinter@sun.science.wayne.edu
Mary Jane Heeg
Affiliation:
Department of Chemistry, Wayne State University, Detroit, Michigan 48202, cwinter@sun.science.wayne.edu
Get access

Abstract

Magnesium-doped semiconductors have existing and anticipated applications in the fabrication of blue and green light-emitting diodes, blue and green laser diodes, and in microelectronics devices. At present, the area is limited by the precursor characteristics of bis(cyclopentadienyl)magnesium and substituted derivatives. We will describe our efforts to identify new magnesium source compounds that are potentially superior to magnesocenes and can be used in chemical vapor deposition processes. Monomeric three- and four-coordinate amides have been synthesized and totally characterized. These complexes are low-melting solids and are significantly more volatile than magnesocene derivatives. We will also describe the synthesis and characterization of several other classes of volatile magnesium compounds that might be useful in chemical vapor deposition processes.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable