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A New Material: a-Si,Ge:H,F in a-Si,Ge:H,F/a-Si:H,F Multilayer Structures

Published online by Cambridge University Press:  26 February 2011

J. P. Conde,
V. Chu,
D. S. Shen,
M. Angell and
S. Wagner
J. P. Conde
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
D. S. Shen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
M. Angell
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
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Abstract

We present a detailed study of the electron transport parallel to the layers in a a-Si,Ge:H,F/a- Si:H,F amorphous semiconductor multilayers. The optical gap of the well layer is shifted from the bulk alloy due to quantum confinement. This shift W can be modeled using a finite barrier height, and electron effective masses for the barrier and for the well.

Multilayer-induced changes in σd and its activation energy Ea,d are completely determined by W. The photoconductivity σph, its temperature dependence (Eaph) and its dependence γ on carrier generation rate reflect a stretching of the conduction band tail near the band edge as the quantum shift W increases.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988, 659
Copyright
Copyright © Materials Research Society 1988

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