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A New Pds Study on PECVD a-Si:H

Published online by Cambridge University Press:  01 January 1993

C. Manfredotti,
F. Fizzotti,
M. Boero,
E. Vittone,
G. Amato and
L. Boarino
C. Manfredotti
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, Torino, Italy
F. Fizzotti
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, Torino, Italy
M. Boero
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, Torino, Italy
E. Vittone
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, Torino, Italy
G. Amato
Affiliation:
National Electrotechnical Institute G. Ferraris, Strada delle Cacce 91, Torino, Italy, and Consorzio INFM, Genova, Italy
L. Boarino
Affiliation:
National Electrotechnical Institute G. Ferraris, Strada delle Cacce 91, Torino, Italy, and Consorzio INFM, Genova, Italy
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Abstract

The effect of incorporation of SiH2 on a-Si:H matrix on the optical properties has been investigated on some details. It is shown that SiH2 incorporation is responsible for a further increase of the optical gap, and also for an increase in disorder. For concentrations larger than 15% approximately, microvoids are probably created and SiH2, which is covering their inner surfaces, seems not to affect the optical properties further on. The results indicate also clearly that the effect of autoannealing of the film during its growth cannot be neglected and that a new parameter should be retained, i.e. the total deposition time.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993, 339
Copyright
Copyright © Materials Research Society 1993

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References

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