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A New Self-Aligned Poly-Si Tft Employing a Pre-Patterned Al Mask Layer by Backside Exposure Technique

Published online by Cambridge University Press:  01 February 2011

Woo-Jin Nam,
Min-Cheol Lee,
Kee-Chan Park,
Jae-Hoon Lee and
Min-Koo Han
Woo-Jin Nam
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: jintree@emlab.snu.ac.kr
Min-Cheol Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: jintree@emlab.snu.ac.kr
Kee-Chan Park
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: jintree@emlab.snu.ac.kr
Jae-Hoon Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: jintree@emlab.snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, KOREA Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: jintree@emlab.snu.ac.kr
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Abstract

A new self-aligned poly-Si TFT has been fabricated by employing a photoresist backside exposure technique. A pre-patterned aluminum (Al) layer on a-Si film not only induces the lateral grain growth (∼1.6 μm) in excimer laser crystallization but also implements the selfalignment of the gate region with the lateral grain region. Photoresist backside exposure through poly-Si film has been successfully performed because crystallized poly-Si has a fairly high UV transmittance. A self-aligned poly-Si TFT with a single grain boundary within the 2 μm channel was successfully fabricated and high on/off current ratio (∼107) was obtained.

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References

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