Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-15T08:50:07.741Z Has data issue: false hasContentIssue false
  • English
  • Français

A New Solution to the Ni-fill issue for Silicide-last Process

Published online by Cambridge University Press:  18 July 2013

Shu J. Mao,
Li C. Zhao,
Jun. Luo and
Jiang. Yan
Shu J. Mao
Affiliation:
Institute of Microelectronics, Chinese Academy of Sciences, Beitucheng West Rosd, Beijing, PA100029, China.
Li C. Zhao
Affiliation:
Institute of Microelectronics, Chinese Academy of Sciences, Beitucheng West Rosd, Beijing, PA100029, China.
Jun. Luo
Affiliation:
Institute of Microelectronics, Chinese Academy of Sciences, Beitucheng West Rosd, Beijing, PA100029, China.
Jiang. Yan
Affiliation:
Institute of Microelectronics, Chinese Academy of Sciences, Beitucheng West Rosd, Beijing, PA100029, China.
Get access

Abstract

Metal Nickel(Ni) fill becomes the challeng in integrating silicide-last process into CMOS advanced technology with further contact size scaling. In this work, the specific contact resistivity (ρc) of cold titanium(Ti)/Si was investigated by the cross-bridge Kelvin resistor(CBKR) method and compared with that of Ni(Pt)Si/Si. The cold Ti/n+-Si showed comparable contact resistance(ρc∼3x10-8Ω·cm2) to Ni(Pt)Si/ n+-Si, while a larger ρc(7.5x10-1Ω·cm2) for cold Ti formed on B+ doped Si substrates. The cold Ti/Si interface was also discussed. Our results furnish a fresh perspective on the solutions to the metal fill challeng for silicide-last process.

Keywords

NisemiconductingSi

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

Wu, H.M., Wu, G.P., Wu, J. G., Huang, H., Yu, S.F., Li, X.W., and Bo, W.H.: Scichina, 42[12](2012), p.1509.Google Scholar
Mao, S.J., Luo, J., and Yan, J.: proc. ICSICT, 2012, p.179.Google Scholar
Jan, C.-H., Agostinelli, M., Buehler, M., Chen, Z.-P., Choi, S.-J., Curello, G., Deshpande, H., Gannavaram, S., Hafez, W., Jalan, U., Kang, M., Kolar, P., Komeyli, K., Lazo, N., Leo, T., Lin, J., Lindert, N., Ma, S., McGill, L., Meining, C., Paliwal, A., Park, J., Phoa, K., Post, I., Pradhan, N., Prince, M., Rahman, A., Rizk, J., Rockford, L., Sacks, G., Tashiro, H., Tsai, C., Vandervoorn, P., Xu, J., Yang, L., Yeh, J.-Y., Yip, J., Zhang, K., and Bai, P.: IEDM Tech. Dig., 2009, p.1.Google Scholar
VanDerVoorn, P., Agostinelli, M., Choi, S.-J., Curello, G., Deshpande, H., El-Tanani, M. A., Hafez, W., Jalan, U., Janbay, L., Kang, M., Koh, K.-J., Komeyli, K., Lakdawala*, H., Lin, J., Lindert, N., Mudanai, S., Park, J., Phoa, K., Rahman, A., Rizk, J., Rockford, L., Sacks, G., Soumyanath*, K., Tashiro, H., Taylor, S., Tsai, C., Xu*, H., Xu, J., Yang, L., Young, I., Yeh, J.-Y., Yip, J., Bai, P., and Jan, C.-H.: VLSI Tech. Dig., 2010, p.137.Google Scholar
Singh, J.:Semiconductor Devices: an introduction(McGraw-Hill, NewYork, 1994), p.79.Google Scholar
Tu, K. N., and Mayer, J. W.:Thin films-interdiffusion and reactions(Wiley, New York, 1978), p.129.Google Scholar
Murarka, S. P., and Fraser, D. B.: J. Appl. Phys, 51[1](1980), 342.CrossRefGoogle Scholar
Maa, J. S., Lin, C. J., and Liu, J. H.: Thin Solid Films, 64[3]( 1979),439.CrossRefGoogle Scholar
Botha, A. P., and Pretorius, R.: Thin Solid Films, 93[1-2](1982), p.127.CrossRefGoogle Scholar
Butz, R., Rubloff, G. W., Tan, T. Y., and Ho, P. S.: Phys.Rev. B, 30[10](1984), p.5421.CrossRefGoogle Scholar
Butz, R., Rubloff, G. W., and Ho, P. S.: J.Vac. Sci.Technol. A, 1[2]( 1983), p.771.CrossRefGoogle Scholar
Taubenblatt, M. A., and Helms, C. R.: J.Appl. Phys, 53[9](1982), p.6308.CrossRefGoogle Scholar
Aboelfotoh, M. O., and Tu, K. N.: Phys.Rev. B, 34[4](1986), p.2311.CrossRefGoogle Scholar
Zhao, Q.T., Knoll, L., Zhang, B., Buca, D., Hartmann, J.-M. and Mantl, S., Microelectron.Eng. (2012), http://dx.doi.org/10.1016/j.mee.2012.10.014.Google Scholar
Sonehara, T., Hokazono, A., Akutsu, H., Sasaki, T., Uchida, H., Tomita, M., Tsujii, H., Kawanaka, S., Inaba, S., and Toyoshima, Y.:IEDM.Tech. Dig., 2008, p.1.Google Scholar
Topaloglu, R.O.: Proc.12th ACM/IEEE international workshop on System level interconnect prediction, 2010, p.59.CrossRefGoogle Scholar