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Nonlinear Dielectric Thin Films For Active and Electrically Tunable Microwave Devices

Published online by Cambridge University Press:  15 February 2011

A. T. Findikoglu,
Q. X. Jia,
D. W. Reagor and
X. D. Wu
A. T. Findikoglu
Affiliation:
Superconductivity Technology Center, findik@lanl.gov
Q. X. Jia
Affiliation:
Superconductivity Technology Center, findik@lanl.gov
D. W. Reagor
Affiliation:
Electronic Materials and Device Research, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545.
X. D. Wu
Affiliation:
Superconductivity Technology Center, findik@lanl.gov
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Abstract

We have prepared electrically tunable and active microwave devices incorporating (superconducting YBa2Cu3O7-x)/(nonlinear dielectric SrTiO3) or (normal metal Au)/(nonlinear dielectric Sr0.5Ba0.5TiO3) bilayers. The dielectric layer thickness for these samples varied between 0.5 μm and 2 μm. The top electrode layer for each sample was patterned into a coplanar waveguide device structure. We have configured these devices as voltage-tunable resonators, voltage-tunable phase shifters, voltage-tunable mixers, and voltage-tunable filters. Under dc voltage bias, these prototype devices have exhibited up to 30% resonant frequency modulation, about 1°/mm-GHz phase shift, more than 40 dB change in mixed microwave power, and finetunable symmetric filter profile with less than 2% bandwidth and more than 15% adaptive range.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995, 303
Copyright
Copyright © Materials Research Society 1996

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