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Nonlinear Optical Study of Si Epitaxy

Published online by Cambridge University Press:  28 February 2011

T. F. Heinz,
M. M. T. Loy and
S. S. Iyer
T. F. Heinz
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
M. M. T. Loy
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
S. S. Iyer
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The applicability of the nonlinear optical technique of surface second-harmonic generation to in-situ studies of epitaxial and non-epitaxial crystal growth of centrosymmetric materials is demonstrated. In measurements of the deposition of atomic Si on Si(111)-7×7 surfaces, the (anisotropic) second-harmonic response is seen to be sensitive to the ordering of fractional monolayers of adatoms. For deposition on a substrate held at room temperature, the second-harmonic data are consistent with the formation of a disordered adlayer on top of the original reconstructed surface. The results of real-time measurements of the thermal annealing of disordered Si adlayers of monolayer thickness are also presented.

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References

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