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Ohmic Contacts to GaAs

Published online by Cambridge University Press:  15 February 2011

Norman Braslau
Norman Braslau*
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, (U.S.A.)
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Abstract

The present capability of obtaining ohmic contacts to GaAs over a range of doping levels is reviewed. Possible models of transport across the metalsemiconductor interface are discussed and contact techniques are described. The widely used Au—Ge alloyed contact is seen to have a spatially inhomogeneous interface which appears to control its contact resistance. The most satisfactory process at this time is to alloy into a previously fabricated heavily doped layer.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982, 393
Copyright
Copyright © Materials Research Society 1982

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References

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