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On the Methodology of Numerical Etching

Published online by Cambridge University Press:  10 February 2011

X. H. Wang,
K. Shyu,
C.-T. Chang,
D. W. Zheng and
Weijia Wen
X. H. Wang
Affiliation:
Microstress Technology, LLC 18645 East Gale Avenue, Suite 200, City of Industry, CA 91748, xinhua@microstress.com
K. Shyu
Affiliation:
Microstress Technology, LLC 18645 East Gale Avenue, Suite 200, City of Industry, CA 91748, xinhua@microstress.com
C.-T. Chang
Affiliation:
Microstress Technology, LLC 18645 East Gale Avenue, Suite 200, City of Industry, CA 91748, xinhua@microstress.com
D. W. Zheng
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095
Weijia Wen
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095
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Abstract

A methodology to study the stress distribution of a patterned thin film residing on a silicon wafer was developed. Si underlying the pattern was thinned down through etching so that the deformation caused by residual stress in the microstructure could be detected by a Twyman- Green interferometer. A procedure called "numerical etching" was implemented to simulate the etching process, which linked the stress state of the microstructure on a regular wafer to that on a Si diaphragm. An initial stress field on the pattern was assumed, and its effect on the deformation of the Si diaphragm beneath was calculated and compared with experimental results. The discrepancy between them was used to modify the initially assumed stress field and repeated until a satisfactory match was achieved. The stress field from numerical analysis accurately predicts the actual stress distribution in and around the patterned structure under investigation. The stress distribution in a Ti pad on a Si3N4/ SiO2/Si composite diaphragm is used as an example.

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