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On the Surface Roughness Evolution During a-Si:H Growth

Published online by Cambridge University Press:  01 February 2011

M.C.M. van de Sanden,
A.H.M. Smets and
W.M.M. Kessels
M.C.M. van de Sanden
Affiliation:
Department of Applied Physics, Center for Plasma Physics and Radiation Technology Eindhoven University of Technology, P.O.Box 513, 5600 MB Eindhoven, The Netherlands, email: m.c.m.v.d.sanden@tue.nl
A.H.M. Smets
Affiliation:
Department of Applied Physics, Center for Plasma Physics and Radiation Technology Eindhoven University of Technology, P.O.Box 513, 5600 MB Eindhoven, The Netherlands, email: m.c.m.v.d.sanden@tue.nl
W.M.M. Kessels
Affiliation:
Department of Applied Physics, Center for Plasma Physics and Radiation Technology Eindhoven University of Technology, P.O.Box 513, 5600 MB Eindhoven, The Netherlands, email: m.c.m.v.d.sanden@tue.nl
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Abstract

The surface roughness evolution during a-Si:H film growth from a SiH3 beam under purely chemical deposition conditions is discussed. The data is explained in terms of the different universality classes proposed in literature. It is argued that roughness evolution during a-Si:H growth shows great similarity with MBE growth, which belongs to a universality class studied extensively by Das Sarma and coworkers. The activation energy for surface diffusion extracted from simulating the growth exponent β vs. temperature reveals an activation energy of about 1 eV. This result suggests that the surface roughness evolution is not controlled by the weakly adsorbed SiH3 radical.

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