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Optical Properties of Ordered Gainp

Published online by Cambridge University Press:  10 February 2011

P. Ernst,
C. Geng,
G. Hahn,
F. Scholz,
H. Schweizer,
Yong Zhang and
A. Mascarenhas
P. Ernst
Affiliation:
4. Physikalisches Institut, Universitit Stuttgart, Pfaffendwaldring 57, 70550 Stuttgart, Germany
C. Geng
Affiliation:
4. Physikalisches Institut, Universitit Stuttgart, Pfaffendwaldring 57, 70550 Stuttgart, Germany
G. Hahn
Affiliation:
4. Physikalisches Institut, Universitit Stuttgart, Pfaffendwaldring 57, 70550 Stuttgart, Germany
F. Scholz
Affiliation:
4. Physikalisches Institut, Universitit Stuttgart, Pfaffendwaldring 57, 70550 Stuttgart, Germany
H. Schweizer
Affiliation:
4. Physikalisches Institut, Universitit Stuttgart, Pfaffendwaldring 57, 70550 Stuttgart, Germany
Yong Zhang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA
A. Mascarenhas
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA
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Abstract

We use the information from low temperature PLE spectra measured on a set of samples with different degree of order for an investigation of the correlation between the order dependent valence band splitting and band gap reduction. The experimental values are compared with predictions from recent ab initio band structure calculations.

Moreover, we show how the low temperature optical properties of ordered GaInP2 are related to the microstructure of the material. We find a close correlation between the size of the ordered domains and the relative intensity of the intrinsic PL-peak from excitonic recombination compared with the rapidly shifting, below band-gap luminescence emission.

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