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The Optical Properties of the Interface Layer in CdS-CdTe Heterojunctions

Published online by Cambridge University Press:  01 February 2011

Sergiu A. Vatavu
Sergiu A. Vatavu*
Affiliation:
Faculty of Physics, Moldova State University, 60 A.Mateevici str., Chisinau, MD 2009, Republic of Moldova
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Abstract

The photosensitivity and electro-reflection spectra of CdS/CdTe heterojunctions annealed up to one hour in presence of CdC12 have been studied. The lifetime of charge carriers, generated in the interface layer, has been determined.

The SnO2/CdS/CdTe/Ni thin films solar cells, deposited by close-spaced sublimation (CSS) technique are photosensitive in the 1.5-2.4 eV spectral region. The spectral distribution of photocurrent is not essentially modified by the increase of the annealing time. A slight decrease of the photocurrent in the 1.5-1.7 eV energy range is observed and the photocurrent slightly increases in the 1.7-2.4 eV region. The recombination of the nonequilibrium charge carriers in the interface layer takes place via recombination levels having a lifetime value, which decreases from 46 μs down to 30 μs along with photon energy increase from 1.55 eV to 2.4 eV respectively (T=293K). The correlation between the light penetration depth in component layers, estimated from the absorption spectral distribution and the photon energies was established.

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References

1 Chopra, K.L., Das, S.R., Thin Film solar cells, New York; London 1983.Google Scholar
2 Wu, X. et al. , preprint proceedings of the NCPV Program Review Meeting 14-17 October 2001, Lakewood, Colorado.Google Scholar
3 Coσoπεβα, H.A., Meπαμππ, A.E., øοτοεφεκþοννβιε øοτοεφεκþ øοτοεφεκ øοτοεφεκ 1974 (in Russian) (N.A. Soboleva, A.E. Melamid, Photoelectronic devices, Vysshaya shkola, Moscow, 1974).Google Scholar
4 Caraman, Iu. et al. , Physics of low-dimensional structures, 7/8, 1-8, (2001).Google Scholar
5 Optimization of Processing and Modeling Issues for Thin-Film Solar Cell Devices, Annual Report to National Renewable Energy Laboratory under Subcontract No. XAK-7-17609-01, 3 February 1997–2 February 1998, Birkmire, R.W., Phillips, J.E., Shafarman, W.N., Hegedus, S.S., and McCandless, B.E Institute of Energy Conversion, University of Delaware, Newark, Delaware.Google Scholar
6 Boiko, B.T. et al. , Solar Energy Materials and Solar Cells, 45 (1997) 303–308.Google Scholar
7 øοτοεφ, øοτοεφεκ ν øοτοεφεκ AIIBVI, øοτοεφεκ øοτοεφεκ. C.A. øοτοεφεκ, øοτοεφε, øοτοεφεκ, 1970 (in Russian) (The Physics and Chemistry of AIIBVI compounds, edited by Medvedev, S. A., Mir, Moscow, 1970).Google Scholar
8 Caraman, M., Gasin, P., Vatavu, S., Thin Solid Films, 480-481 (2005) 254–258.Google Scholar
9 øοτοεφεκøοτοεφεκøοτοεφεκ, AIIIBv øοτοεφε. D. øοτοεφεκ, øοτοεφεκ, øοτοεφεκ, 1970 (in Russian) (Optical properties of the AIIIBV semiconductors, edited by Willardson, R. et al. , Mir, Moscow, 1970).Google Scholar
10 Pollak, F.H. Modulation spectroscopy of semiconductors and semiconductors microstructures, p. 527 in Optical properties Associated with Surface Excitation of Semiconductors: R.F. Wallis, 1994 Elsevier Science; Handbook of Semiconductors, edited by Moss, T.S..Google Scholar
11 Toyama, T., Yamamoto, T., Okamoto, H., Solar Energy Materials and Solar Cells, 49 (1997) 213–218.Google Scholar
12 øοτοεφεκ, D.A., øοτοεφεκøοτοεφεκøοτοεφεκøοτοεφεκøοτοεφεκ øοτοεφεκ, 1985 (in Russian) (R.J. Nelson, Excitons in semiconductor alloys, in Excitons: Modern problems on condensed matter science, edited by Rashba, E.I., Sturge, M. D., Nauka, Moscow, 1985).Google Scholar
13 Ohta, K., Saraie, J., Tanaka, T., Jpn. J. App. Phys. 12 (1973) 1641.Google Scholar