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Optical Transitions on CdS/CdTe CVD Heterostructures

Published online by Cambridge University Press:  25 February 2011

Claude Boemare and
M H Nazare
Claude Boemare
Affiliation:
Departamento de Fisica, Universidade de Aveiro, 3800 Aveiro, PORTUGAL.
M H Nazare
Affiliation:
Departamento de Fisica, Universidade de Aveiro, 3800 Aveiro, PORTUGAL.
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Abstract

Wide-band gap II-VI semiconductors have direct bandgaps which cover the energy range from the red to the u-v. This makes such compounds ideal for optoelectronic applications. CdS has a band gap of 2.42 eV and becomes potentially useful for the green region of the spectrum. However, because CdS has a preference to adopt the hexagonal wurtzite structure, epitaxial growth of this semiconductor is complicated. Nevertheless succesful growth of CdS layers onto CdTe is possible. We report a detailed photoluminescence study of CdS/CdTe heterostructures grown by CVD. The CdS layers have high quality hexagonal structure. Luminescence lines are narrow enough and we could detect a splitting ocurring on the excited state of a neutral acceptor bound exciton, at 2.5462 eV.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992, 267
Copyright
Copyright © Materials Research Society 1992

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References

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