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Optoelectronic Properities of A-Ge:H/A-Si:H Superlattic Structures

Published online by Cambridge University Press:  28 February 2011

C. R. Wronski,
P. D. Persans,
B. Abeles,
T. Tiedje and
M. Hicks
C. R. Wronski
Affiliation:
Exxon Research and Engineering Company Clinton Township, Route 22 East Annandale, New Jersey 08801
P. D. Persans
Affiliation:
Exxon Research and Engineering Company Clinton Township, Route 22 East Annandale, New Jersey 08801
B. Abeles
Affiliation:
Exxon Research and Engineering Company Clinton Township, Route 22 East Annandale, New Jersey 08801
T. Tiedje
Affiliation:
Exxon Research and Engineering Company Clinton Township, Route 22 East Annandale, New Jersey 08801
M. Hicks
Affiliation:
Exxon Research and Engineering Company Clinton Township, Route 22 East Annandale, New Jersey 08801
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Abstract

The optoelectronic properties of multilayer a-Ge:H/a-Si:H superlattices with bandgaps between ˜1.4 and 1.1eV are presented. The dependence of the electronic properties on the band alignment and the layer thicknesses is established and quantified. Particular emphasis is given to properties relevant to practical device applications and which involve carrier transport perpendicular to the layers.

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References

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