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Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source

Published online by Cambridge University Press:  10 February 2011

C. Constantine,
D. Johnson,
C. Barratt,
R. J. Shul,
G. B. Mcclellan,
R. D. Briggs,
D. J. Rieger,
R. F. Karlicek JR.,
J. W. Lee and
S. J. Pearton
C. Constantine
Affiliation:
PLASMA THERM IP, St. Petersburg FL 33716
D. Johnson
Affiliation:
PLASMA THERM IP, St. Petersburg FL 33716
C. Barratt
Affiliation:
PLASMA THERM IP, St. Petersburg FL 33716
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuqureque NM 87185
R. D. Briggs
Affiliation:
Sandia National Laboratories, Albuqureque NM 87185
D. J. Rieger
Affiliation:
Sandia National Laboratories, Albuqureque NM 87185
R. F. Karlicek JR.
Affiliation:
EMCORE Corporation, Somerset NJ 08873
J. W. Lee
Affiliation:
University of Florida, Gainesville FL 32611
S. J. Pearton
Affiliation:
University of Florida, Gainesville FL 32611
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Abstract

Inductively Coupled Plasma (ICP) sources are extremely promising for large-area, highion density etching or deposition processes. In this review we compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same singlewafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.

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