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Partial Dislocations and Critical Thicknesses for Strained Layer Relaxation

Published online by Cambridge University Press:  25 February 2011

D. M. Hwang,
R. Bhat,
S. A. Schwarz and
C. Y. Chen
D. M. Hwang
Affiliation:
Beilcore, Red Bank, NJ 07701–7040, USA
R. Bhat
Affiliation:
Beilcore, Red Bank, NJ 07701–7040, USA
S. A. Schwarz
Affiliation:
Beilcore, Red Bank, NJ 07701–7040, USA
C. Y. Chen
Affiliation:
Beilcore, Red Bank, NJ 07701–7040, USA
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Abstract

Partial dislocations and their associated stacking faults are identified as the primary defects responsible for the initial relaxation of tensile-strained layers of fcc structure. The critical thickness for the formation of 90° partial dislocations at the strained interface is almost a factor of two smaller than that predicted for the formation of 60° perfect dislocation. Microstructures revealed by transmission electron microscopy from strained layers of various lattice mismatches and thicknesses agree with the prediction of the standard free-energy minimization model.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992, 421
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Hwang, D. M., Schwarz, S. A., Ravi, T. S., Bhat, R., and Chen, C. Y., Phys. Rev. Lett. 66, 739 (1991).Google Scholar
[2] Hwang, D. M., Schwarz, S. A., Ravi, T. S., Bhat, R., and Chen, C. Y., Mat. Res. Soc. Proc. 202, 531 (1991).Google Scholar
[3] Hwang, D. M., Schwarz, S. A., Bhat, R., Chen, C. Y., and Ravi, T. S., Optical and Quantum Electronics 23, S829 (1991).Google Scholar
[4] Hwang, D. M., Schwarz, S. A., Bhat, R., Chen, C. Y., and Ravi, T. S., in Institute of Physics Conference Series Number 120: Gallium Arsenide and Related Compounds 1991, ed. Stringfellow, G. B. (Institute of Physics, Bristol, 1992), p. 365.Google Scholar
[5] Matthews, J. M. and Blakeslee, A. E., J. Crys. Gr. 27, 118 (1974).Google Scholar
[6] Matthews, J. M., J. Vac. Sci. Technol. 12, 126 (1975).Google Scholar
[7] Here we consider both the dislocation lines at the lower and the upper interfaces to have the same sense of direction, e.g., both running into the paper. If we treat these two dislocation lines as a part of the dislocation loop surrounding the stacking fault, i.e., one dislocation line comes out of the paper while the other goes into the paper, then these two dislocations would have the same Burgers vector.Google Scholar
[8] Hirth, J. P. and Lothe, J., Theory of Dislocations (Wiley, New York, 1982), p. 351.Google Scholar
[9] Hwang, D. M., Schwarz, S. A., Mei, P., Bhat, R., Venkatesan, T., Nazar, L., and Schwartz, C. L., Appl. Phys. Lett. 54, 1160 (1989).Google Scholar
[10] McKernan, S., Zhu, G. J., and Carter, C. B., Phil. Mag. Lett. 64, 349 (1991).Google Scholar