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Patterned Garnet Films on Substrates with Ion-Beam Bombarded Micropatterns

Published online by Cambridge University Press:  10 February 2011

Yasuyuki Okamura and
Sadahiko Yamamoto
Yasuyuki Okamura
Affiliation:
Also with Wakayama University, Faculty of Systems Engineering, Department of Optomechatronics, 930 Sakaedani, Wakayama, Wakayama 640-8510, Japan
Sadahiko Yamamoto
Affiliation:
Osaka University, Graduate School of Engineering Science, Division of Advanced Electronics and Optical Science, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 Japan, okamura@ee.es.osaka-u.ac.jp
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Abstract

We report the selected-area epitaxy of rare-earth iron garnet crystalline and amorphous straight ridge patterns, from 4μm to 8μm in width, deposited on Gd3Ga5O12 single crystal substrates. These samples were fabricated via a sputter epitaxial method on substrates that were partially etched by ion-beam bombardment. The strip pattern direction has given the considerable influence on the crystal-graphic formation of the sidewall of the grown ridge. The ridge shapes were similar to results that have been reported for the dissolution forms of garnet crystals in phosphoric acid and the facet of garnet crystals grown from flux. Furthermore, we have successfully grown both an epitaxial garnet film onto an amorphous film and an amorphous straight ridge with a triangular shape surrounded by crystal.

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