Hostname: page-component-7b7567c8c-2n9c9 Total loading time: 0 Render date: 2026-11-15T12:10:11.749Z Has data issue: false hasContentIssue false
  • English
  • Français

Pentacene Thin-film Transistors Fabricated with a Simple Solution Process

Published online by Cambridge University Press:  01 February 2011

Yutaka Natsume and
Takashi Minakata
Yutaka Natsume
Affiliation:
natsume.yc@om.asahi-kasei.co.jp, Asahi-Kasei corporation, Analysis & Simulation Center, 2-1 Samejima, Fuji, Shizuoka, 4168501, Japan
Takashi Minakata
Affiliation:
minakata.tb@om.asahi-kasei.co.jp, Asahi-KASEI corporation, 2-1 Samejima, Fuji, Shizuoka, 4168501, Japan
Get access

Abstract

We have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.

Keywords

solution depositionorganicsemiconducting

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Crone, B., Dodabalapur, A., Lin, Y.-Y., Filas, R.W., Bao, Z., LaDuca, A, Sarpeshkar, R., Katz, H.E., and Lin, W., Nature, 403, 521 (2000).Google Scholar
2 Baude, P.F., Ender, D.A., Haase, M.A., Kelly, T.W., Muyres, D.V., and Theiss, S.D., Appl. Phys. Lett., 82, 3964 (2003).Google Scholar
3 Crone, B., Dodabalapur, A., Gelperin, A., Torsi, L., Katz, H.E., Lovinger, A.J., and Bao, Z., Appl. Phys. Lett., 78, 2229 (2001).Google Scholar
4 Afzali, A., Dimitrakopoulos, C.D., and Breen, T.L., J. Am. Chem. Soc., 124, 8812 (2002).Google Scholar
5 Brown, A.R., Pomp, A., Leeuw, D.M. de, Klassen, D.B.M., Havinga, E.E., Herwig, P.T. and Mullen, K., J. Appl. Phys., 69, 7354 (1996).Google Scholar
6 Minakata, T., Natsume, Y., Synth. Met., 153, 1 (2005).Google Scholar
7 Dimitrakopoulos, C.D., Brown, A.R., and Pomp, A., J. Appl. Phys., 80, 2501 (1996).Google Scholar
8 Bouchoms, I.P.M., Schoonveld, W.A., Vrijmoeth, J., and Klapwijk, T.M., Synth. Met., 104, 175 (1999).Google Scholar
9 Mattheus, C.C., Dros, A.B., Baas, J., Oostergetel, G.T., Meetsma, A., Boer, J.L. de, and Palstra, T.T.M., Synth. Met., 138, 475 (2003).Google Scholar
10 Pernstich, K.P, Haas, S., Oberhoff, D., Goldmann, C., D.J. Gundlach, Batlogg, B., Rashid, A.N., and Schitter, G., J. Appl. Phys., 96, 6431 (2004).Google Scholar
11 Horowitz, G., and Delannoy, P., J. Appl. Phys., 70, 469 (1991).Google Scholar
12 Horowitz, G., Hajlaoui, R., Bouchriha, H., Bourguiga, R., and Hajlaoui, M., Adv. Mater., 10, 923 (1998).Google Scholar
13 Brown, A.R., Jarrett, C.P., Leeuw, D.M. de, and Matters, M., Synth. Met., 88, 37 (1997).Google Scholar