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Perpendicular Magnetic Anisotropy on W-based Spin-Orbit Torque CoFeB | MgO MRAM Stacks

Published online by Cambridge University Press:  27 February 2015

Andreas Kaidatzis,
Vasileios Psycharis,
José Miguel García-Martín,
Cristina Bran,
Manuel Vázquez and
Dimitrios Niarchos
Andreas Kaidatzis*
Affiliation:
Department of Materials, INN, NCSR Demokritos, 153 10 Aghia Paraskevi Attikis, Athens, Greece
Vasileios Psycharis
Affiliation:
Department of Materials, INN, NCSR Demokritos, 153 10 Aghia Paraskevi Attikis, Athens, Greece
José Miguel García-Martín
Affiliation:
IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid, Spain
Cristina Bran
Affiliation:
ICMM-Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain
Manuel Vázquez
Affiliation:
ICMM-Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain
Dimitrios Niarchos
Affiliation:
Department of Materials, INN, NCSR Demokritos, 153 10 Aghia Paraskevi Attikis, Athens, Greece
*
*Corresponding author e-mail: kaidatzis@ims.demokritos.gr
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Abstract

We study W | Ta | CoFeB | MgO stacks for spin-orbit torque MRAM applications. A strong perpendicular magnetic anisotropy is obtained after annealing for CoFeB layer thickness of 0.9 nm or 1.2 nm and for specific W/Ta ratios, were the Ta layer thickness is between 0.3 nm and 1 nm. Furthermore, the desired high-spin orbit coupling β-phase of W is preserved even after annealing at 350°C. We argue that an efficient B getter, like Ta, is necessary for the coherent crystallization of the CoFeB | MgO interface that allows for the establishment of perpendicular magnetic anisotropy.

Keywords

magnetic propertiesmemorysputtering

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References

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