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Phase Separation During Film Deposition

Published online by Cambridge University Press:  25 February 2011

M. Atzmon,
C. D. Adams,
Y.-T. Cheng and
D. J. Srolovitz
M. Atzmon
Affiliation:
Dept. of Nuclear Engineering, University of Michigan, Ann Arbor, MI 48109.
C. D. Adams
Affiliation:
Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109.
Y.-T. Cheng
Affiliation:
General Motors Research Laboratories, Physical Chemistry Dept., Warren, MI 48090-9055.
D. J. Srolovitz
Affiliation:
Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109.
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Abstract

We report a study of the microstructure and surface morphology of co-deposited Al-Ge films. At 200 °C and above, the terminal solid solutions are obtained, whereas at lower temperatures, metastable amorphous or crystalline phases coexist with the Al-rich terminal phase. For film thickness below 200 nm, lateral phase separation is observed with surface grooving which reflects the bulk microstructure. Analysis of the data with a model for the diffusion process shows that the results are consistent with a surface diffusion mechanism. For thicker films, there is a transition into a layered microstructure in which Al segregates to the surface. This transition is explained in terms of the surface and interfacial energies of the phases.

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References

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