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Phosphorus Doping into Silicon Using ArF Excimer Laser

Published online by Cambridge University Press:  21 February 2011

Abdelilah Slaoui,
Francois Foulon,
Eric Fogarassy and
Paul Siffert
Abdelilah Slaoui
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS nº292), B.P. 20, F-67037 STRASBOURG CEDEX, France
Francois Foulon
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS nº292), B.P. 20, F-67037 STRASBOURG CEDEX, France
Eric Fogarassy
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS nº292), B.P. 20, F-67037 STRASBOURG CEDEX, France
Paul Siffert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS nº292), B.P. 20, F-67037 STRASBOURG CEDEX, France
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Abstract

Chemical doping of single-crystal silicon in a PF5 atmosphere is performed byirradiation with an ArF excimer laser working at 193 nm. We have investigated the dependence of doping parameters such as the number of pulses and PF5 gas pressure on the sheet resistance and the impurity concentration profiles. From these results, it is found that phosphorus atoms are produced by pyrolysis of PF5 molecules adsorbed (chemisorbed at low pressure and physisorbed at pressure higher than 1 Torr) on thesilicon surface. As for the incorporation mechanism, it is shown that the process is external rate limited for doping in PF5 ambient whereas mainly diffusion limitedfor doping using only the chemisorbed layer.

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References

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