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Photodetector Using Surface-Plasmon Antenna for Optical Interconnect

Published online by Cambridge University Press:  01 February 2011

Keishi Ohashi and
Junichi Fujikata
Keishi Ohashi
Affiliation:
k-ohashi@cb.jp.nec.com, NEC Corporation, Nano Electronics Res. Labs., Tsukuba, Japan
Junichi Fujikata
Affiliation:
j-fujikata@cj.jp.nec.com, NEC Corporation, Nano Electronics Res. Labs., Tsukuba, Japan
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Abstract

We used a surface-plasmon antenna to obtain small photodetectors for LSI on-chip optical interconnection by using near-field light generated by the antenna. Such near-field devices are not constrained by the diffraction limit and they offer an approach to integrated nanoscale photonic devices. A small semiconductor structure is located near the antenna to absorb the near-field light. This structure can be made as small as the Schottky depletion layer, so the separation between electrodes can be reduced to almost the size of the near-field region. We have demonstrated a “Si nano-photodiode” or plasmon photodiode that uses the near-field localized in a subwavelength region, which is usually relatively large in size because of the long absorption length for Si (˜10 μm at a wavelength of ˜800 nm). The Si nano-photodiode has a fast impulse response with a full-width at half-maximum of ˜20 ps even when the bias voltage is small (˜1 V or less). We demonstrated an on-chip optical interconnect chip to operate circuitry in an LSI chip by using waveguide-coupled Si nano-photodiodes.

Keywords

AgoptoelectronicSi

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