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Piezoelectric Materials for Advanced Integrated RF Components

Published online by Cambridge University Press:  01 February 2011

Mahmoud Al Ahmad,
Fabio Coccetti and
Robert Plana
Mahmoud Al Ahmad
Affiliation:
al-ahmad@laas.fr, LAAS CNRS, ., 7 avenue du Colonel Roche, Toulouse Cedex 4, N/A, France
Fabio Coccetti
Affiliation:
LAAS CNRS, 7 avenue du Colonel Roche, Toulouse Cedex 4, France
Robert Plana
Affiliation:
LAAS CNRS, 7 avenue du Colonel Roche, Toulouse Cedex 4, France
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Abstract

This paper will first address the piezoelectric material characterization using a capacitance measurement technique. An original simple and efficient technique for the determination of the d 33 piezoelectric coefficient of lead zirconate titanate thin films is described. Classical capacitor plate theory and piezoelectric material analysis are used to calculate the capacitance variation in lead zirconate titanate film, enabling piezo-electric coefficient to be determined. The technique outlined here avoids the use of mechanical/optical apparatus that may require heavy preparation of sample substrate geometry. Then, this work also treats design and fabrication issues associated with innovative tunable front-end components which combine two different ceramic technologies, namely multilayer ceramic circuit boards (low temperature cofired ceramics or LTCC) and piezoelectric actuator technology within a single device.

Keywords

piezoelectricceramicthin film

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