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Point and Extended Defect Interactions in Silicon

Published online by Cambridge University Press:  15 February 2011

M. E. Law and
S. K. Earles
M. E. Law
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, law@tcad.ee.ufl.edu
S. K. Earles
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, law@tcad.ee.ufl.edu
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Abstract

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the defect behavior during short time, low temperature anneals is a key to explaining TED. The surface can play a defining role in the removal of point defects from the bulk, but there is a lot of controversy over the role and strength of the surface sink for point defects. The controversy will be reviewed, and new experimental results will be presented that investigate the role of the surface on TED.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997, 379
Copyright
Copyright © Materials Research Society 1997

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References

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