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Point Defects in SiC

Published online by Cambridge University Press:  01 February 2011

Ádám Gali,
Michel Bockstedte,
Ngyen Tien Son and
Erik Janzén
Ádám Gali
Affiliation:
agali@eik.bme.hu, Budapest University of Technology and Economics, Department of Atomic Physics, Budafoki ut 8, Budapest, H-1111, Hungary, +36-1-463-1580
Michel Bockstedte
Affiliation:
Bockstedte@physik.uni-erlangen.de, Universität Erlangen-Nürnberg, Staudtstr. 7/B2, Erlangen, D-91058, Germany
Ngyen Tien Son
Affiliation:
son@ifm.liu.se, Linköping University, Linköping, S-581 83, Sweden
Erik Janzén
Affiliation:
erija@ifm.liu.se, Linköping University, Linköping, S-581 83, Sweden
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Abstract

Tight control of defects is pivotal for semiconductor technology. However, even the basic defects are not entirely understood in silicon carbide. In the recent years significant advances have been reached in identification of defects by combining the experimental tools like electron paramagnetic resonance and photoluminescence with ab initio calculations. We summarize these results and their consequences in silicon carbide based technology. We show recent methodological developments making possible the accurate calculation of absorption and emission signals of defects.

Keywords

electron spin resonanceluminescencedefects

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