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Post Epitaxial Disordering of CuPtB Ordered AIGaInP/GaInP for Microstructuring

Published online by Cambridge University Press:  10 February 2011

M. Bukard,
A. Englert,
C. Geng,
F. Scholz and
H. Schweizer
M. Bukard
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart; +49-711-685-4533, +49-711-685-5097,mb4@pi4wap0.physik.uni-stuttgart.de
A. Englert
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart; +49-711-685-4533, +49-711-685-5097,mb4@pi4wap0.physik.uni-stuttgart.de
C. Geng
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart; +49-711-685-4533, +49-711-685-5097,mb4@pi4wap0.physik.uni-stuttgart.de
F. Scholz
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart; +49-711-685-4533, +49-711-685-5097,mb4@pi4wap0.physik.uni-stuttgart.de
H. Schweizer
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart; +49-711-685-4533, +49-711-685-5097,mb4@pi4wap0.physik.uni-stuttgart.de
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Abstract

Lateral order/disorder structures have been fabricated out of ordered GaInP quantum wells by ion implantation.

Using high resolution electron beam lithography for definition of implantation masks, we achieve wire structures down to 35nm width. Implantation was carried out at energies down to 25keV and doses from 3e10cm−2 to 6e13cm−2. The so created vacancies lead to a reduction of the disordering temperature threshold of about 850°C for mere thermal disordering. Annealing those structures at 800°C results in selective disordering in the unmasked regions. We have ordered wire structures within disordered barriers. Even for the smallest mask widths of 35nm, the PL emission of wires and barriers are well resolved.

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References

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