Hostname: page-component-7b7567c8c-2n9c9 Total loading time: 0 Render date: 2026-11-15T03:51:42.671Z Has data issue: false hasContentIssue false
  • English
  • Français

A Procedure for Cross Sectioning Specific Semiconductor Devices for Both SEM and TEM Analysis

Published online by Cambridge University Press:  16 February 2011

J. P. Benedict,
Ron Anderson,
S. J. Klepeis and
M. Chaker
J. P. Benedict
Affiliation:
Surface/Materials Analysis, IBM East Fishkill Laboratory, Hopewell Junction, NY 12533, USA
Ron Anderson
Affiliation:
Surface/Materials Analysis, IBM East Fishkill Laboratory, Hopewell Junction, NY 12533, USA
S. J. Klepeis
Affiliation:
Surface/Materials Analysis, IBM East Fishkill Laboratory, Hopewell Junction, NY 12533, USA
M. Chaker
Affiliation:
Surface/Materials Analysis, IBM East Fishkill Laboratory, Hopewell Junction, NY 12533, USA
Get access

Abstract

The procedures described in this paper allow both SEM and TEM analysis to be performed on the same, device specific, semiconductor cross section. In order to accomplish this, a number of tools and fixtures have been constructed that allow the user to polish into the sample to a predetermined plane-of-polish, bisecting the device or feature of interest for SEM analysis. After SEM examination, the specimen is prepared for TEM analysis by first affixing a grid to the just-examined surface, inverting the specimen and parallel-polishing the backside of the specimen until the specimen's total thickness is in the 0.5 to 1.0μm range using the described tools. A subsequent one to ten minute ion milling step cleans the specimen. A very considerable positive side-effectof this method is the nearelimination of artifacts arisingfrom the use of strong chemicals and lengthy ion milling. The method has been extended to the preparation of plan-view device samples and non-semiconductor specimens.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Klepeis, S. J. et al. , in Specimen Preparation for Transmission Electron Microscopy of Materials, ed. Bravman, , et al., Mater. Res. Soc. Proc. 115, Pittsburgh, PA USA p. 179.Google Scholar
2 Anderson, R. M., et al., Microscony of Semiconducting Materials 1989, Proceedings of the Physics Conference held at Oxford University, 10–13 April 1989, ed. by Cullis, A. G. and Hutchison, J. L., Institute of Physics Conference Series Number 100, Bristol and New York, 1989.Google Scholar
3 Klepeis, S. J., et al., EMSA Proceedings, ed. by Bailey, G.W., San Francisco Press, p. 712, 1989.Google Scholar
4 Martinek, K. H., et al., EMSA Proceedings, ed. by Bailey, G.W., San Francisco Press, p. 720, 1989.Google Scholar
5 Bravman, J. C. and Sinclair, R., J. Electr. Microsc. Tech., 1, 53 (1984) for a definitive treatment of the cross sectioning process.Google Scholar
6 Cowden, W. C. and Datye, A. K., in Specimen Preparation for Transmission Electron Microscopy of Materials, ed. Bravman, , et al., Mater. Res. Soc. Proc. 115, Pittsburgh, PA USA p. 109.Google Scholar
7 Kim, M. J. and Carpenter, R. W., Ultramicrocopy, 21,327, 1987.Google Scholar
8 Cullis, A. G. and Chew, N. G., in Specimen Preparation for Transmission Electron Microscopy of Materials, ed. Bravman, , et al., Mater. Res. Soc. Proc. 115, Pittsburgh, PA USA p. 3.Google Scholar
9 Berry, A and Benedict, J., IBM Internal Publication, external publication in process.Google Scholar