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Process and Material Requirements for Successful Heterogonous Passive Component Integration in RF System

Published online by Cambridge University Press:  26 February 2011

Eric Beyne,
Walter De Raedt,
Geert Carchon and
Philippe Soussan
Eric Beyne
Affiliation:
eric.beyne@imec.be, IMEC, APIC, Kapeldreef 75, Leuven, 3001, Belgium, +32 16281261
Walter De Raedt
Affiliation:
walter.deraedt@imec.be, IMEC, Kapeldreef 75, Leuven, 3001, Belgium
Geert Carchon
Affiliation:
geert.carchon@imec.be, IMEC, Kapeldreef 75, Leuven, 3001, Belgium
Philippe Soussan
Affiliation:
philippe.soussan@imec.be, IMEC, Kapeldreef 75, Leuven, 3001, Belgium
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Abstract

Applications using rf radios operating at frequencies above 1GHz are proliferating. The highest operating frequencies continue to increase and applications above 10GHz and up to 77GHz are already emerging. Systems become more complex and devices need to operate at several different frequency bands using different wireless standards. The rf-front end sections of these devices are characterized by a high diversity of components, in particular high precision passive components. In order to be produced cost-effectively, these elements need to be integrated along with the semiconductor devices. This paper describes the requirements for successful integration of rf-passive devices and proposes multilayer thin film technology as an effective rf-integration technology.

Keywords

deviceslithography (deposition)microelectronics

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References

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