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Process-Induced Defects in High-Purity GaAs

Published online by Cambridge University Press:  15 February 2011

P. H. Campbell,
O. Aina,
B. J. Baliga and
R. Ehle
P. H. Campbell
Affiliation:
General Electric Research & Development Center Schenectady, New York
O. Aina
Affiliation:
General Electric Research & Development Center Schenectady, New York
B. J. Baliga
Affiliation:
General Electric Research & Development Center Schenectady, New York
R. Ehle
Affiliation:
General Electric Research & Development Center Schenectady, New York
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Abstract

High temperature annealing of Si 3 N4 and SiO2 capped high purity LPE GaAs is shown to result in a reduction in the surface carrier concentration by about an order of magnitude. Au Schottky contacts made on the annealed samples were found to have severely degraded breakdown characteristics. Using deep level transient spectroscopy, deep levels at EC–.58eV, EC–.785eV were detected in the SiO2, capped samples and EC–.62eV, EC–.728eV in the Si3N4 capped Samples while none was detected in the unannealed samples.The electrical degradations are explained in terms of compensation mechanisns and depletion layer recombination-generation currents due to the deep levels.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982, 283
Copyright
Copyright © Materials Research Society 1982

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References

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