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Progress in Epitaxial Oxides on Semiconductors

Published online by Cambridge University Press:  11 February 2011

Z. Yu,
Y. Liang,
H. Li,
J. Curless,
C. Overgaard,
R. Droopad,
Y. Wei,
X. Hu,
B. Craigo and
J. Finder
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Z. Yu
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
Y. Liang
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
H. Li
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
J. Curless
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
C. Overgaard
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
R. Droopad
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
Y. Wei
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
X. Hu
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
B. Craigo
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
J. Finder
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
K. Eisenbeiser
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
A. Talin
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
S. Smith
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
S. Voight
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
J. Wang
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
D. Marshall
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
D. Jordan
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
J. Edwards Jr
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
K. Moore
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
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Abstract

In this paper, we review the recent progress in the area of epitaxial oxides on semiconductors at Motorola Labs. Critical issues such as surface preparation, initial nucleation and growth behaviors of SrTiO3 (STO) thin film epitaxy on Si(001) are addressed. Using a systematic approach, high-quality epitaxial STO films are successfully grown on semiconductor substrates such as Si, silicon-on-insulator (SOI) and Ge. Amorphous interfacial layer between the epitaxial STO and the semiconductor can be eliminated or tailored by controlling oxide growth process and parameters. STO-based metal-oxide-semiconductor (MOS) capacitors and transistors are fabricated and tested, in order to explore the potential of STO as high-k gate dielectrics for future generation CMOS transistor technology. In addition, high-quality STO epitaxial films are utilized as thin buffer layers for fabricating integrated oxide heterostructures on semiconductors. Various perovskite oxide films such as SrZrO3, LaAlO3 and Pb(Zr,Ti)O3 are deposited epitaxially on STO-buffered Si(001) for potential high-k gate dielectrics and surface-acoustic-wave (SAW) device applications.

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References

REFERENCES

1. Galasso, F.S., Structure, Properties and Preparation of Perovskite-Type Compounds, (Pergamon Press, 1969).Google Scholar
2. Tejuca, L.G. and Fierro, J.L.G. (eds.), Properties and Applications of Perovskite-Type Oxides, (Dekker, M., 1993).Google Scholar
3. Kado, Y. and Arita, Y., J. Appl. Phys. 61, 2398–2400 (1987).Google Scholar
4. Mori, H. and Ishiwara, H., Jpn. J. Appl. Phys. 30, L1415 (1991).Google Scholar
5. Moon, B.K. and Ishiwara, H., Jpn. J. Appl. Phys. 30, 5911 (1991).Google Scholar
6. Moon, B.K. and Ishiwara, H., Jpn. J. Appl. Phys. (Part 1) 33, 1472 (1994).Google Scholar
7. McKee, R.A., Walker, F.J., Conner, J.R., Specht, E.D. and Zelmon, D.E., Appl. Phys. Lett. 59, 782–784 (1991).Google Scholar
8. McKee, R.A., Walker, F.J., Conner, J.R. and Raj, R., Appl. Phys. Lett. 63, 2818–2820 (1993).Google Scholar
9. McKee, R.A., Walker, F.J. and Chisholm, M.F., Phys. Rev. Lett. 81, 3014–3017 (1998).Google Scholar
10. Tambo, T., Nakamura, T., Maeda, K., Ubba, H. and Tatsuyama, C., Jpn. J. Appl. Phys. (Part 1) 37, 4454–4459 (1998).Google Scholar
11. Tambo, T., Maeda, K., Shimizu, A. and Tatsuyama, C., J. Appl. Phys. 86, 3213 (1999).Google Scholar
12. Yu, Z., Droopad, R., Ramdani, J., Curless, J.A., Overgaard, C.D., Finder, J.M., Eisenbeiser, K.W., Wang, J., Hallmark, J.A. and Ooms, W.J., in Ultrathin SiO2 and High–k Materials for ULSI Gate Dielectrics, edited by Huff, H.R., Richter, C.A., Martin, M.L., Lucovsky, G., and Hattori, T., MRS Symp. Proc. 567, (Mat. Res. Soc., Pittsburgh, PA, 1999), pp. 427–433.Google Scholar
13. Yu, Z., Ramdani, J., Curless, J.A., Finder, J.M., Overgaard, C.D., Droopad, R., Eisenbeiser, K.W., Hallmark, J.A. and Ooms, W.J., J. Vac. Sci. Technol. B18, 1653 (2000).Google Scholar
14. Yu, Z., Ramdani, J., Curless, J.A., Overgaard, C.D., Finder, J.M., Droopad, R., Eisenbeiser, K.W., Hallmark, J.A., Ooms, W.J. and Kaushik, V., J. Vac. Sci. Technol. B18, 2139 (2000).Google Scholar
15. Lettieri, J., Haeni, J.H. and Schlom, D.G., J. Vac. Sci. Technol. A20, 1332–1340 (2002).Google Scholar
16. Barin, I., Thermodynamic Data of Pure Substances, (VCH, 1989).Google Scholar
17. Fan, W.C. and Ignatiev, A., Surf. Sci. 253, 297 (1991).Google Scholar
18. Fan, W.C., Wu, N.J. and Ignatiev, A., Phys. Rev. B42, 1254 (1990).Google Scholar
19. Hu, X., Yu, Z., Curless, J.A., Droopad, R., Ooms, W.J. and Sarid, D., Appl. Surf. Sci. 181, 103–110 (2001).Google Scholar
20. Wang, J., Hallmark, J.A., Marshall, D.S., Ooms, W.J., Ordejon, P., Junquera, J., Sanchez-Portal, D., Artacho, E. and Soler, J.M., Phys. Rev. B60, 4968–4971 (1999).Google Scholar
21. Hu, X., Li, H., Liang, Y., Wei, Y., Yu, Z., Marshall, D., Edwards, J. Jr, Droopad, R., Zhang, X., Demkov, A. and Moore, K., Appl. Phys. Lett. 82, 203–205 (2003).Google Scholar
22. Wang, J., unpublished.Google Scholar
23. Droopad, R., Wang, J., Eisenbeiser, K., Yu, Z., Ramdani, J., Curless, J., Overgaard, C.D., Finder, J.M., Hallmark, J.A., Marshall, D.S. and Ooms, W.J., in Recent Developments in Oxide and Metal Epitaxy – Theory and Experiment, edited by Yeadon, M., Chiang, S., Farrow, R.F.C., Evans, J.W. and Auciello, O., MRS Symp. Proc. 619, (Mat. Res. Soc., Warrendale, PA, 2000), pp. 155–165.Google Scholar
24. Wei, Y., Hu, X., Liang, Y., Jordan, D.C., Craigo, B., Droopad, R., Yu, Z., Demkov, A., Edwards, J.L. Jr, and Ooms, W.J., J. Vac. Sci. Technol. B20, 1402–1405 (2002).Google Scholar
25. Ramdani, J., Droopad, R., Yu, Z., Curless, J.A., Overgaard, C.D., Finder, J.M., Eisenbeiser, K.W., Hallmark, J.A., Ooms, W.J., Kaushik, V., Alluri, P. and Pietambaram, S., Appl. Surf. Sci. 159–160, 127–133 (2000).Google Scholar
26. Yang, G.Y., Finder, J.M., Wang, J., Wang, Z.L., Yu, Z., Ramdani, J., Droopad, R., Eisenbeiser, K.W. and Ramesh, R., J. Mat. Res. 17, 204–213 (2002).Google Scholar
27. Li, H., et al., J. Appl. Phys. (2003), accepted for publication.Google Scholar
28. Eisenbeiser, K., Finder, J.M., Yu, Z., Ramdani, J., Curless, J.A., Hallmark, J.A., Droopad, R., Ooms, W.J., Salem, L., Bradshaw, S. and Overgaard, C.D., Appl. Phys. Lett. 76, 1324 (2000).Google Scholar
29. Droopad, R., Yu, Z., Ramdani, J., Hilt, L., Curless, J., Overgaard, C. D., Edwards, J.L., Finder, J., Eisenbeiser, K., Wang, J., Kaushik, V., Nguyen, B.-Y. and Ooms, B., J. Cryst. Growth 227–228, 936–943 (2001).Google Scholar
30. Droopad, R., Yu, Z., Overgaard, C., Edwards, J., Ramdani, J., Hilt, L., Curless, J., Finder, J., Eisenbeiser, K., Wang, J. and Ooms, W., Mat. Sci. & Eng. B87, 292–296 (2001).Google Scholar
31. Chambers, S.A., Liang, Y., Yu, Z., Droopad, R., Ramdani, J. and Eisenbeiser, K., Appl. Phys. Lett. 77, 1662–4 (2000).Google Scholar
32. Chambers, S.A., Liang, Y., Yu, Z., Droopad, R. and Ramdani, J., J. Vac. Sci Technol. A19, 934–9 (2001).Google Scholar
33. Talin, A.A., Smith, S.M., Voight, S., Finder, J., Eisenbeiser, K., Penunuri, D., Yu, Z., Fejes, P., Eschrich, T., Curless, J., Convey, D. and Hooper, A., Appl. Phys. Lett. 81, 1062–1064 (2002).Google Scholar